Micron G11 memory chip: double the capacity, 25% better energy efficiency
Micron's next-generation memory chip G11 can hold roughly twice the amount of data as the current G9 on the same silicon area, with the number of stacked layers increasing from 276 to more than 400, transfer speeds up to 1.5 times higher, and energy consumption per bit of data transfer reduced by more than 25%. The chip skips the G10 naming and was redesigned specifically for AI data centers. It is expected to enter mass production in the second half of 2027, with SSDs equipped with G11 launching later. Micron has not yet disclosed changes in cost per GB.
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Micron’s next memory chip generation, G11, will fit roughly twice as much data on the same patch of silicon as today’s G9, the main route to bigger SSDs, which AI data centers now buy in huge amounts.
G9 stacks its storage cells 276 floors high. Micron skipped the G10 name and reworked its next chip for AI, calling it G11: it stacks over 400 floors and packs each cell tighter, so the same size chip holds about twice the data, moves it up to 1.5x faster and uses over 25% less energy to move each bit.
Volume production starts in the second half of 2027, so drives using G11 arrive later, and Micron hasn’t said how much cheaper each gigabyte will get, since taller stacks and a second bonded wafer also add cost.