After NVIDIA's de facto acquisition of Groq, Groq's next-generation chip is reportedly set to abandon SRAM in favor of 3D stacked DRAM
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Foreign media reports say that Groq, which has been de facto acquired by NVIDIA, is evaluating the introduction of 3D stacked DRAM packaging technology in its next-generation chips. The approach is called 3DS and uses TSVs to drill thousands of microvias inside DRAM chips for vertical interconnection. Unlike HBM, which pursues data exchange rates, 3DS focuses on expanding storage capacity while maintaining the existing standard DRAM interface protocols. Groq's LPU architecture relies on SRAM with very small capacity and faces a capacity bottleneck when dealing with models with hundreds of billions of parameters. 3D stacking is intended to solve the problem of not being able to store enough while maintaining speed advantages.
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The original report discloses that Groq's next-generation chip plans to shift from SRAM to 3D stacked DRAM, allowing readers to understand its trade-offs in addressing the capacity bottleneck for large-model inference.
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外媒最新报道指出，AI半导体领域传出架构剧变信号，以高速SRAM设计闻名、近期遭英伟达实质性收购的芯片公司Groq正评估在下一代芯片中引入3D堆叠DRAM封装技术，试图摆脱传统SRAM架构的容量瓶颈。
目前，AI芯片多采2D封装，Groq计划导入3D封装，将多个半导体裸片垂直堆叠，其方案名为3DS，核心是利用TSV（硅通孔）技术在DRAM芯片内打穿数千微孔垂直互连，犹如为存储器建起摩天大楼，在单位面积内提供超高显存密度。
与英伟达高端显卡常用的HBM不同，两者虽均采TSV堆叠，但HBM追求极致数据交换速率，3DS则在保持现有DRAM标准接口协议的前提下，将重心放在存储容量扩张。对于必须载入海量参数的AI推理任务，此举是更务实的降本增效方案。
长期以来，Groq的LPU架构因极高推理速度备受瞩目，但依赖的SRAM容量极小，单芯片面对千亿级参数模型时捉襟见肘。
DRAM虽然原生读写速度略逊于SRAM，但大容量特性在复杂模型部署中更具优势。通过3D堆叠，Groq试图在维持速度优势同时解决“存不下”痛点，为超大型AI模型推理铺路。