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ChangXin Technology announced a total investment of 34.9 billion yuan, comprising a 24.1 billion yuan technology R&D project and the 10.8 billion yuan second phase of a memory wafer back-end testing base. Related reports indicate that the company concurrently disclosed revenue of 150.31 billion yuan and net profit attributable to shareholders of 77.605 billion yuan for the first half of 2026, turning profitable year-on-year, with a gross margin of 84.84% for its main business; of the aforementioned 34.9 billion yuan investment, 18 billion yuan comes from IPO over-raised funds. The reports also state that its fifth-generation DRAM process entered mass production in September, with the half-pitch of the active area in the memory array reduced to 11.95 nanometers. The latest development currently supported by evidence remains this investment announcement itself.
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ChangXin Technology announces 34.9 billion yuan investment in R&D and testing projects
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Sep 30
Huxiu
ChangXin Technology earns a net profit of 77.6 billion yuan in half a year, and invests another 34.9 billion yuan to bet on next-generation DRAM
In the first half of 2026, ChangXin Technology reported revenue of 150.31 billion yuan and net profit attributable to shareholders of 77.605 billion yuan, turning profitable year-on-year, with a gross margin of 84.84% for its main business. In the same period, the company announced a 24.1 billion yuan DRAM process R&D project and a 10.8 billion yuan second phase of a memory wafer back-end testing base, totaling 34.9 billion yuan, of which 18 billion yuan comes from IPO excess raised funds. Its fifth-generation DRAM process entered mass production in September, with the half-pitch of the active area in the memory array reduced to 11.95 nanometers.