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Infineon will convert existing cleanrooms in Villach, Austria, to build the world's first large-scale volume production plant for 300mm gallium nitride (GaN) power semiconductors. According to heise online, the project involves an investment of approximately 1.1 billion euros, of which up to 319 million euros comes from EU Chips Act subsidies, with production planned to start by the end of 2027. The report states that GaN power devices can switch at high frequency with low losses at blocking voltages of 1700 volts, and are used in solar inverters, chargers, motor control and power supplies for AI systems; Infineon says this will make it the world's first company to bring GaN power electronics to large-scale volume production. No further progress has been disclosed at present.
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heise online
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heise online
Infineon to build the world's first 300mm gallium nitride power semiconductor volume production plant in Austria
Infineon will convert existing cleanrooms in Villach, Austria, to build the world's first 300mm gallium nitride (GaN) power semiconductor high-volume production plant, with production planned to start by the end of 2027. The investment is approximately 1.1 billion euros, of which up to 319 million euros comes from EU Chips Act subsidies. GaN power devices can switch at high frequency with low losses at blocking voltages of 1700 volts, and are used in solar inverters, chargers, motor control and power supplies for AI systems. Infineon says this will make it the world's first company to bring GaN power electronics to large-scale volume production.