美光 G11 存储芯片：容量翻倍、能效提升 25%
Micron’s next memory chip generation, G11, will fit roughly twice as much data on the same patch of silicon as today’s G9, the main route to bigger SSDs, which
美光下一代存储芯片 G11 在相同硅片面积上可容纳约两倍于当前 G9 的数据量，堆叠层数从 276 层提升至 400 层以上，传输速度最高提升 1.5 倍，每 bit 数据传输能耗降低超过 25%。该芯片跳过 G10 命名、专为 AI 数据中心重新设计，预计 2027 年下半年量产，搭载 G11 的 SSD 会更晚上市，美光尚未公布每 GB 成本变化。
正文
Micron’s next memory chip generation, G11, will fit roughly twice as much data on the same patch of silicon as today’s G9, the main route to bigger SSDs, which AI data centers now buy in huge amounts.
G9 stacks its storage cells 276 floors high. Micron skipped the G10 name and reworked its next chip for AI, calling it G11: it stacks over 400 floors and packs each cell tighter, so the same size chip holds about twice the data, moves it up to 1.5x faster and uses over 25% less energy to move each bit.
Volume production starts in the second half of 2027, so drives using G11 arrive later, and Micron hasn’t said how much cheaper each gigabyte will get, since taller stacks and a second bonded wafer also add cost.